Ge Wafer (111)+/-1.5 degree, Un doped, 2"x0.5 mm, 1SP, R>50 ohm-cm

Ge Wafer (111)+/-1.5 degree, Un doped, 2"x0.5 mm, 1SP, R>50 ohm-cmGe Wafer Specification Growing Method: CZ Orientation: (111) + 1. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Finish(RMS or Ra): one side epi polished < 8 A ( by AFM) Doping: Undoped Conductor type: N type Resstivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754 Density:

Boiling Point:         2162 °C

Polished surface: One  side epi polished by special CMP technology

Please always keep nanopowder in vacuum chamber or glove box to avoid aggregation (click picture below-right to order)

Microwave Frequency:               2

Flats: SEMI

30 segments programmable for heating rate

Conductor type:S-I

FeCrAl Resistance wire:           Max

Separator discs must be large enough to fully separate the positive and negative electrodes to avoid short-circuit inside the coin cells

Position adjustment & accuracy X:   20 mm +/- 0

200&450 Mesh to separate the 32~75 microns particles from the powder clumps

SYJ-30 (originally  EQ-MT-200) is CE certified heavy-duty bench top wet abrasive cut-off saw