SKU:46220480415
GaP Wafer, Undoped (111) 10x10x0.5 mm, 2sp
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USA
- USA
- CAN
- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
GaP Wafer, Undoped (111) 10x10x0.5 mm, 2spGaP single crystal wafer, Size: 10mm x 10 mm x 0. 5 mm, Doping: undoped, Conducting type: N type, Orientation: (111) Polished: Two sides Surface finish (RMS or Ra) : < 8A Typical Physical Properties Crystal Structure Cubic. a =5. 4505 Growth Method CZ (LEC) Density 4. 13 g cm3 Melt Point 1480 oC Thermal Expansion 5. 3 x10 6 oC Dopant S doped undoped Crystal growth axis <111> or <100> <100> or <111> Conducting Type N N Carrier Concentration 2 ~ 8 x1017
Primary Flat Length: 17 +/- 1 mm
87 nm and < 10 nm
Density: ~5
EQ-CR2016-Kapton are special CR-2016 coin cell cases with 10mm Kapton windows (5 set/pck)
must do Grounding tests(GFCI) before first-time use
5 ms @ 540 nm
Surface roughness: Ra <10A
EQ-F-adaptor-D80-2
Temperature
Power Input Socket External Power Cord Internal Power Extension
Thermal conductivity: 270 mW / cm
259") Weight 8
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